Effect of strain on internal quantum efficiency of InGaN/GaN blue LED
| Autor: | Bijay Kumar Sahoo, Neha Anchal |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Auger effect business.industry Superlattice 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention Auger symbols.namesake Delocalized electron law 0103 physical sciences symbols Optoelectronics Voltage droop Quantum efficiency 0210 nano-technology Polarization (electrochemistry) business Light-emitting diode |
| Zdroj: | Materials Today: Proceedings. 28:311-313 |
| ISSN: | 2214-7853 |
| DOI: | 10.1016/j.matpr.2020.02.155 |
| Popis: | In this work, effect of strain on efficiency droop of InGaN/GaN blue LEDs is investigated. This blue LEDs faces significant efficiency droop issue. The causes of efficiency droop are Shockley Read Hall recombination (SRH), Auger recombination (AR), carrier delocalization and electron leakage. The SRH, Auger and electron leakage are functions of carrier concentration and temperature. InGaN/GaN superlattice has strain at each interface. This strain generates piezoelectric polarization charges which modify optical and electrical properties of the material InGaN. It is shown that polarization charges enhance droop in internal quantum efficiency of blue LED. Thus, for improvement in efficiency, polarization field required to be minimized which requires growth of the material in m-plane instead of c-plane. |
| Databáze: | OpenAIRE |
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