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Results are presented of a process-development effort to achieve a 1-Mrad silicon (Si) radiation-hardening capability at temperatures down to 40 K, using Texas Instruments high volume, 1-micrometer commercial process. The one-micrometer process was characterized at 77 K and 40 K: radiation effects on the baseline SiO2 gate dielectric and N-channel field effect transistor edges were observed, as were freeze-out and hot-carrier effects of the lightly doped drain implants. These freeze-out phenomena were confirmed, using SUPREM, MINIMOS, and MEDICI. The simulated data compared favorably with measured results. Simulations were run, using various implant doses and profiles to eliminate the freeze-out and hot-carrier effects in the new process. Devices having these simulated profiles were processed, and the results are presented.© (1994) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
