The application of low energy ion scattering spectroscopy (LEIS) in sub 28-nm CMOS technology
| Autor: | Dina H. Triyoso, Elke Erben, Robert Binder, M. Weisheit, Joachim Metzger, Kornelia Dittmar, Hans-Jürgen Engelmann, HH Hidde Brongersma |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Auger electron spectroscopy Materials science Nanotechnology 02 engineering and technology Surfaces and Interfaces General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Surfaces Coatings and Films Secondary ion mass spectrometry Low-energy ion scattering X-ray photoelectron spectroscopy Gate oxide 0103 physical sciences Materials Chemistry Work function 0210 nano-technology Metal gate Spectroscopy |
| Zdroj: | Surface and Interface Analysis. 49:1175-1186 |
| ISSN: | 0142-2421 |
| Popis: | With the transition to ≤28-nm CMOS technology nodes, the surface analytical challenges with regard to steadily decreasing dimensions and still growing materials options raise the demand of high performing surface analysis techniques. Characterization of ultrathin films and multilayer stacks, especially in high-k metal gate stacks, by means of low energy ion scattering spectroscopy (LEIS) with its monolayer sensitivity has been established as a very useful analysis technique next to Auger electron spectroscopy, X-ray photoelectron spectroscopy, and time-of-flight secondary ion mass spectrometry. Questions regarding film nucleation, growth, coverage, and diffusion can be answered, thereby enabling those processes to be controlled appropriately. In this work, growth studies of ALD HfO2 and TiN are shown, as well as film thickness determination based on surface spectra. PVD aluminum and lanthanum, acting as work function metals on the gate oxide, were deposited, and their film formation and closure were investigated. Further application fields of LEIS have emerged from the characterization of in-die features on patterned wafers. As presented on test arrays, it is possible to detect material deep in trenches. This is an advantage if residues need to be identified after etch or clean processes. |
| Databáze: | OpenAIRE |
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