Control of crystal polarity in oxide and nitride semiconductors by interface engineering
| Autor: | H. J. Ko, S. K. Hong, T. Suzuk, H. Suzuki, Takafumi Yao, Tsutomu Minegishi, Meoungwhan Cho |
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| Rok vydání: | 2006 |
| Předmět: |
Reflection high-energy electron diffraction
Materials science Condensed Matter::Other business.industry Polarity (physics) Oxide Physics::Optics Heterojunction Nitride Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials Crystal Condensed Matter::Materials Science Crystallography chemistry.chemical_compound chemistry Mechanics of Materials Materials Chemistry Ceramics and Composites Sapphire Optoelectronics Electrical and Electronic Engineering Photonics business |
| Zdroj: | Journal of Electroceramics. 17:255-261 |
| ISSN: | 1573-8663 1385-3449 |
| DOI: | 10.1007/s10832-006-7722-1 |
| Popis: | The ZnO-based oxide and GaN-based nitride semiconductors have been explored for applications to photonic devices in the UV wavelength region and high power electronic devices, where the control of crystal polarity is one of the key issues. This paper will deal with the control of crystal polarity in ZnO/GaN heterostructures and ZnO/sapphire heterostructures by interface engineering. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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