Growth, structural and optical characterization of MBE quantum wells

Autor: Wolfgang Gebhardt, T. Reisinger, M. Kastner, M. Meier, Andreas Rosenauer, F. Franzen, S. Lankes
Rok vydání: 1996
Předmět:
Zdroj: Journal of Crystal Growth. 159:510-513
ISSN: 0022-0248
DOI: 10.1016/0022-0248(95)00808-x
Popis: ZnCdSe ZnSe quantum wells (QW) were grown with molecular beam epitaxy (MBE) on GaAs(001) substrates cleaned with hydrogen plasma. Reflection high-energy electron diffraction (RHEED) was used for in-situ growth control of the QW structures. A quantitative evaluation of the RHEED oscillations yields an exact value of the growth rate. Furthermore, in comparing the growth rate of the barrier and the well a reasonable estimate of the Cd content is possible. The in-situ RHEED measurements were supplemented by ex-situ HRXRD and HRTEM investigations. The latter method was found to be especially useful to evaluate the Cd-concentration profile of the QWs by digital analysis of lattice images (DALI). X-ray rocking curves of MQWs were recorded which show well-resolved satellite peaks. A comparison with simulations based on dynamical diffraction theory yields the structural parameters such as well width, barrier width and composition of the QWs. The XRD and TEM results are compared with the parameters determined by RHEED. In addition, we performed photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy for optical characterization of the samples. The PLE spectra show an interference pattern which is explained by standing polariton waves.
Databáze: OpenAIRE