De-bondable SiC SiC wafer bonding via an intermediate Ni nano-film
| Autor: | Eiji Higurashi, Haruo Nakazawa, Fengwen Mu, Takehito Shimatsu, Yinghui Wang, Miyuki Uomoto, Yoshikazu Takahashi, Tadatomo Suga, Kenichi Iguchi |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Fabrication Annealing (metallurgy) Wafer bonding General Physics and Astronomy 02 engineering and technology Surfaces and Interfaces General Chemistry 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences Surfaces Coatings and Films Amorphous solid Atomic diffusion chemistry.chemical_compound chemistry Nano Silicon carbide Wafer Composite material 0210 nano-technology |
| Zdroj: | Applied Surface Science. 465:591-595 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2018.09.050 |
| Popis: | In this study, a de-bondable wafer bonding method for silicon carbide (SiC) that can sustain rapid thermal annealing (RTA) at ∼1273 K has been realized. Two SiC wafers were bonded via an intermediate nickel (Ni) nano-film at room temperature without any pressure, which was characterized as a seamless and robust bonding. After the RTA process, the strength of the bonding interface was dramatically decreased and the de-bonding could happen at the interface during pulling test. Both of the mechanisms of bonding and de-bonding have been investigated through interface analyses. The sufficient atomic diffusion between two deposited Ni nano-films together with the interfacial mixing between amorphous SiC and the Ni nano-film contribute to the strong bonding of SiC SiC. The interfacial precipitation of layered carbon material parallel to the SiC substrates is assumed to be the reason of the interface weakening and de-bonding after annealing. It is believed that the further development of this bonding and de-bonding technology will advance thin SiC device fabrication, where the RTA process at ∼1273 K is widely used. |
| Databáze: | OpenAIRE |
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