Steep slope negative capacitance FDSOI MOSFETs with ferroelectric HfYOx
| Autor: | Qing-Tai Zhao, Qinghua Han, Juergen Schubert, Siegfried Mantl, Thomas Carl Ulrich Tromm |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Capacitance Ferroelectricity Threshold voltage Hysteresis Logic gate Electric field 0103 physical sciences MOSFET Optoelectronics 0210 nano-technology business Negative impedance converter |
| Zdroj: | 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS). |
| DOI: | 10.1109/ulis.2018.8354733 |
| Popis: | Steep slope negative capacitance MOSFETs with HfYOx ferroelectric on FDSOI were experimentally demonstrated. An average SS of 30 mV/dec was achieved over 3 decades of drain current. We found that the subthermal SS degrades with the sweeping numbers, which is assumed to be caused by the traps in the ferroelectric oxide layer. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|