Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes
Autor: | D. M. Shukurova, T. S. Kamilov, Andrey S. Orekhov, B. Z. Sharipov, V. V. Klechkovskaya |
---|---|
Rok vydání: | 2011 |
Předmět: | |
Zdroj: | Technical Physics. 56:1423-1428 |
ISSN: | 1090-6525 1063-7842 |
DOI: | 10.1134/s1063784211100185 |
Popis: | The current-voltage characteristics of Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes are studied experimentally. The current passage mechanism under illumination with hν ≥ Eg is considered. The role of a contact to Mn4Si7 in the provision of high photosensitivity under illumination of the base by light with hν ≥ 1.14 eV at low temperatures, 77–220 K, is analyzed. From electrical measurements, electron microscopic data for the Mn4Si7-Si〈Mn〉 interface, and photocurrent-voltage characteristics, a band diagram under the conditions of photocurrent passage is constructed. The high low-temperature photosensitivity of the diodes (Iph/Id ≥ 109) is explained by the impact-ionization-induced modulation of the base conductivity and injection amplification of holes in the transition layer. |
Databáze: | OpenAIRE |
Externí odkaz: |
načítá se...