Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes

Autor: D. M. Shukurova, T. S. Kamilov, Andrey S. Orekhov, B. Z. Sharipov, V. V. Klechkovskaya
Rok vydání: 2011
Předmět:
Zdroj: Technical Physics. 56:1423-1428
ISSN: 1090-6525
1063-7842
DOI: 10.1134/s1063784211100185
Popis: The current-voltage characteristics of Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes are studied experimentally. The current passage mechanism under illumination with hν ≥ Eg is considered. The role of a contact to Mn4Si7 in the provision of high photosensitivity under illumination of the base by light with hν ≥ 1.14 eV at low temperatures, 77–220 K, is analyzed. From electrical measurements, electron microscopic data for the Mn4Si7-Si〈Mn〉 interface, and photocurrent-voltage characteristics, a band diagram under the conditions of photocurrent passage is constructed. The high low-temperature photosensitivity of the diodes (Iph/Id ≥ 109) is explained by the impact-ionization-induced modulation of the base conductivity and injection amplification of holes in the transition layer.
Databáze: OpenAIRE
načítá se...