Correlation between low-frequency noise and low-temperature performance of two-dimensional electron gas FET's
| Autor: | M. Pouysegur, J.-L. Cazaux, J.-M. Dieudonne, J. Graffeuil |
|---|---|
| Rok vydání: | 1986 |
| Předmět: |
Noise temperature
Chemistry business.industry Infrasound Noise spectral density Bandwidth (signal processing) High-electron-mobility transistor Electronic Optical and Magnetic Materials Electronic engineering Optoelectronics MESFET Field-effect transistor Electrical and Electronic Engineering business Fermi gas |
| Zdroj: | IEEE Transactions on Electron Devices. 33:572-575 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/t-ed.1986.22534 |
| Popis: | We report here on low-frequency (LF) noise of GaAs/ GaAlAs TEGFET's. Present investigations show that this noise is not inherently lower in TEGFET's than in MESFET's. Moreover, the bias and frequency dependence of the noise was found to indicate that traps in GaAlAs have a fundamental influence on LF noise. A close correlation is subsequently observed between the noise level at ambient temperature and the TEGFET static and dynamic performances at low temperature (130 K). |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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