Faceted growth of ({\bf {\overline 1}103})-oriented GaN domains on an SiO2-patterned m-plane sapphire substrate using polarity inversion
| Autor: | Chinkyo Kim, Hansub Yoon, Dongsoo Jang, Miyeon Jue |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Overline Polarity (international relations) Substrate (chemistry) 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences General Biochemistry Genetics and Molecular Biology Crystallography symbols.namesake Stark effect 0103 physical sciences Hydride vapour phase epitaxy Sapphire symbols Sapphire substrate 0210 nano-technology |
| Zdroj: | Journal of Applied Crystallography. 50:30-35 |
| ISSN: | 1600-5767 |
| DOI: | 10.1107/s1600576716015077 |
| Popis: | Heteroepitaxial growth of ({\overline 1}103)-oriented GaN domains on m-plane sapphire is energetically unfavourable in comparison with that of (1{\overline 1}0{\overline 3})-oriented GaN domains, but the faceted domains with ({\overline 1}103)-oriented GaN reveal a more m-facet-dominant configuration than (1{\overline 1}0{\overline 3})-oriented GaN in such a way that the quantum-confined Stark effect can be more effectively suppressed. It is reported here, for the first time, that semipolar ({\overline 1}103)-oriented and faceted GaN domains can be grown on an SiO2-patterned m-plane sapphire substrate by employing polarity inversion of initially nucleated (1{\overline 1}0{\overline 3})-oriented GaN domains. This polarity inversion of semipolar GaN was found to occur when the domains were grown with a 20–37.5 times higher V/III ratio and 70 K lower growth temperature than corresponding parameters for polarity-not-inverted domains. This work opens up a new possibility of effective suppression of the quantum-confined Stark effect by polarity-controlled semipolar GaN in an inexpensive manner in comparison with homoepitaxial growth of ({\overline 1}103)-oriented GaN on a GaN substrate. |
| Databáze: | OpenAIRE |
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