Modeling of Integrated Circuit Yield Using a Spatial Nonhomogeneous Poisson Process
| Autor: | Way Kuo, Jung Yoon Hwang, Chunghun Ha |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Engineering
Yield (engineering) Stochastic process business.industry Semiconductor device modeling Hardware_PERFORMANCEANDRELIABILITY Integrated circuit Condensed Matter Physics Poisson distribution Industrial and Manufacturing Engineering Point process Electronic Optical and Magnetic Materials law.invention symbols.namesake law symbols Electronic engineering Wafer Electrical and Electronic Engineering Cluster analysis Biological system business |
| Zdroj: | IEEE Transactions on Semiconductor Manufacturing. 24:377-384 |
| ISSN: | 1558-2345 0894-6507 |
| DOI: | 10.1109/tsm.2011.2143733 |
| Popis: | This paper proposes a new yield model for integrated circuits using a spatial point process. The defect density variation by location on a wafer is modeled by a spatial nonhomogeneous Poisson process. The intensity function of the yield model describes the defect pattern on wafers. As a result, the model differs from the existing compound Poisson yield models in its capability to describe the spatial defect distribution. Using model-based clustering, the defect clusters from assignable causes, which contain the information about the variations of manufacturing processes, can be classified from others. The proposed model considers the defect density variation among wafers and the impact of defect size on the probability of a defect causing the circuit failure. The performance of the new yield model is verified using simulated data and real data. Simulation results show that the new yield model performs better than a compound Poisson yield model. |
| Databáze: | OpenAIRE |
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