High pressure thermal oxide/InP interface

Autor:	Carl W. Wilmsen, G. Hryckowian, R. G. Gann, Kent M. Geib, R. J. Zeto, J. Costello
Rok vydání:	1985
Předmět:	chemistry.chemical_compound Thermal oxide Chemistry Diffusion High pressure Inorganic chemistry Thermal General Engineering Oxide Analytical chemistry chemistry.chemical_element Oxygen
Zdroj:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 3:1103
ISSN:	0734-211X
DOI:	10.1116/1.583062
Popis:	The growth of thermal oxides in high pressure dry oxygen has been investigated and compared with oxides grown at 1 atm. The outer layers of the high and low pressure oxides are almost identical but the interfaces are significantly different. The 1 atm oxide interface contains InPO4, In2O3, and elemental P. The high pressure oxide interfaces contain InPO4, In2O3, and P2O5. This suggests that the high pressure causes O2 to diffuse to the interface where it reacts with the P to form P2O5.
Databáze:	OpenAIRE
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