Energy loss rate and non-ohmic characteristics of a degenerate surface layer of compound semiconductors at low lattice temperatures
| Autor: | D.P. Bhattacharya, Sulava Bhattacharyya, B. Roy |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Condensed Matter::Other Degenerate energy levels 02 engineering and technology Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials symbols.namesake Distribution function Lattice (order) 0103 physical sciences symbols Fermi–Dirac statistics Compound semiconductor Surface layer 0210 nano-technology Ohmic contact |
| Zdroj: | Physica E: Low-dimensional Systems and Nanostructures. 126:114465 |
| ISSN: | 1386-9477 |
| Popis: | The rate of energy loss of the non-equilibrium electrons and their non-ohmic mobility characteristics have been analyzed here for a degenerate ensemble of two dimensional electron gas in a well of compound semiconductor, taking due account of some of the low temperature features. In place of the Fermi Dirac distribution function, a well-tested alternative form of the distribution function has been used here for mathematical simplicity. The numerical results thus obtained here for the wells of InSb, GaAs and GaN are compared with some available theoretical and experimental data. Our theoretical results are seen to be in quite reasonable agreement with the experimental data when some qualitative comparison is made between them. The results being interesting, the present work stimulates further studies in the same field. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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