Electrical Measurements of Sidewall Spacer Dimensions

Autor:	L. Gutai, J. M. De Blasi, T. W. Bril, M. Chu
Rok vydání:	1986
Předmět:	Fabrication Materials science Plasma etching Silicon business.industry chemistry.chemical_element Nanotechnology chemistry Etching (microfabrication) Reticle Optoelectronics Wafer Electrical measurements Reactive-ion etching business
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
Popis:	A whole wafer measurement method was developed to measure submicron oxide spacer dimensions. The technique offers the capability to evaluate the glass deposition and etchback processes used to form the spacers. Lateral diffusion of implanted layers can also be measured with this method. Measured spacer-width values agree well with measurements from SEM micrographs. Results show that the precision of this technique is presently limited by electrical probing accuracy and reticle fabrication.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::dcc4fa3e65113f382b586003861a4055 https://doi.org/10.1117/12.949741 Zobrazit plný text záznamu