A Single-Inductor Dual-Output Converter With the Stacked mosfet Driving Technique for Low Quiescent Current and Cross Regulation
| Autor: | Ying-Hsi Lin, Hsin Chen, Li-Chi Lin, Chao-Jen Huang, Tsung-Yen Tsai, Wen-Hau Yang, Chun-Chieh Kuo, Ke-Horng Chen, Shian-Ru Lin, Yu-Sheng Ma |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
business.industry 020208 electrical & electronic engineering Biasing 02 engineering and technology Chip Inductor Noise (electronics) Power (physics) Footprint (electronics) MOSFET 0202 electrical engineering electronic engineering information engineering Optoelectronics Transient response Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Power Electronics. 34:2758-2770 |
| ISSN: | 1941-0107 0885-8993 |
| DOI: | 10.1109/tpel.2018.2845124 |
| Popis: | Stacked mosfet structures made of low-voltage devices suffer from degraded transient response or large footprint when a capacitorless or dominant-pole compensated low-dropout (LDO) regulator biases the driver. Due to the self-stabilizing nature, the proposed stacked mosfet driver (SMD) technology effectively drives the power stage and greatly reduces the noise at the switching nodes for low cross regulation (CR) in a single-inductor dual-output (SIDO) converter. In addition, two inherent LDO regulators in SMD technology fully regulate the dual outputs with the advantage of low quiescent current at no-load conditions. The experimental results show that the test chip fabricated under the 0.25- μ m process has low CR of 0.015 mV/mA and ultralow quiescent current of 5 μ A under no-load conditions. |
| Databáze: | OpenAIRE |
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