Evaluation of electron irradiated embedded SiGe source/drain diodes by Raman spectroscopy
| Autor: | Nobuyuki Naka, Cor Claeys, Eddy Simoen, Kenichiro Takakura, Mireia Bargallo Gonzalez, Hidenori Ohyama, Isao Tsunoda |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Materials science
Condensed matter physics Silicon business.industry chemistry.chemical_element Substrate (electronics) Electron Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials symbols.namesake Optics chemistry Stress relaxation symbols Electron beam processing Irradiation Electrical and Electronic Engineering business Raman spectroscopy Diode |
| Zdroj: | Microelectronic Engineering. 88:484-487 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2010.11.006 |
| Popis: | The stress evolution of Si"0"."7"5Ge"0"."2"5 layers for Si"0"."7"5Ge"0"."2"5 source/drain (S/D) diodes, which have been irradiated at room temperature with 2-MeV electrons, is investigated using Raman spectroscopy measurements. According to Raman results for Si"0"."7"5Ge"0"."2"5/Si hetero-structures before and after irradiation, tensile stress was induced in the silicon substrate under the Si"0"."7"5Ge"0"."2"5 layer. Before irradiation, the range of tensile stress estimated by the peak shift of the Raman spectrum was -110 to -10MPa for several measurement patterns. After irradiation, the tensile stress was relaxed in all measurement patterns though the compressive stress status in the Si"0"."7"5Ge"0"."2"5 layer was not changed. The stress relaxation in the silicon substrate amounted to about 10MPa as a maximum. The influence of the irradiation on the stress relaxation in the silicon substrate, could be explained because the electron irradiation at 2-MeV can easily penetrate through the studied 140nm Si"0"."7"5Ge"0"."2"5 layers. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect