Temperature profile along the cavity axis of high power quantum well lasers during operation

Autor:	F. P. Dabkowski, P. Gavrilovic, Aland K. Chin, S. Alie, D. M. Beyea
Rok vydání:	1994
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Substrate (electronics) Electroluminescence Heat sink Laser Active layer Semiconductor laser theory law.invention Optics Quantum dot laser law Optoelectronics business Quantum well
Zdroj:	Applied Physics Letters. 64:13-15
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.110901
Popis:	Measurements of the temperature distribution along the cavity of 0.5 W AlGaAs quantum well lasers are presented. The spatial distribution of temperature was determined by measuring the spectral shift of electroluminescence emitted through a window in the GaAs substrate metallization. The average temperature of the active layer is 10–15 K higher than the heatsink temperature at 0.5 W output. Facet temperatures can exceed the average active layer temperature by over 100 K. Data are also presented illustrating the temperature profile at different drive currents between threshold and the maximum operating current. A temperature profile of a laser with a damaged front facet is presented, showing a hot region that is twice the size of the defect.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::dcada57f8567159b4f6ee57ca4d17e9d https://doi.org/10.1063/1.110901 Zobrazit plný text záznamu