Enhanced efficiency of Cu(In,Ga)Se2 solar cells by adding Cu2ZnSn(S,Se)4 absorber layer
| Autor: | Nadir Bouarissa, A. Dilmi, Zahir Rouabah, H. Heriche, Idris Bouchama |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Photovoltaic system chemistry.chemical_element 02 engineering and technology Quantum dot solar cell 021001 nanoscience & nanotechnology 01 natural sciences Copper indium gallium selenide solar cells Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry 0103 physical sciences Optoelectronics Thin film solar cell Electrical and Electronic Engineering Gallium Thin film 0210 nano-technology business Layer (electronics) Indium |
| Zdroj: | Optik. 144:378-386 |
| ISSN: | 0030-4026 |
| DOI: | 10.1016/j.ijleo.2017.07.006 |
| Popis: | A new structure of thin film solar cells, with Cu(In,Ga)Se 2 (CIGS) and Cu 2 ZnSn(S,Se) 4 (CZTSSe) as absorber layers, CdS as a buffer layer and ZnO as a window layer, has been simulated using SCAPS one-dimensional simulation program. The aim of the present contribution is to investigate the performance of thin film photovoltaic solar cells. The influences of several factors on the photovoltaic cell parameters are estimated. It is found that by adding CZTSSe as an absorber layer in the conventional CIGS solar cell, the efficiency is enhanced from 17. 91% up to 21.84%, bearing in mind that when only CIGS is used, with the same thickness, we get an efficiency of 19.19%. This result may help in overcoming the problem of the high cost and scarcity of some of the materials, such as indium and gallium used in the production of CIGS solar cells. |
| Databáze: | OpenAIRE |
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