The effect of N2 flow rate on discharge characteristics of microwave electron cyclotron resonance plasma

Autor:	Xin-Lu Deng, Wen-Qi Lu, Jun Xu, Wanyu Ding, Chuang Dong
Rok vydání:	2009
Předmět:	Physics Argon Cyclotron resonance chemistry.chemical_element Plasma Condensed Matter Physics Electron cyclotron resonance Volumetric flow rate chemistry.chemical_compound Silicon nitride chemistry Emission spectrum Atomic physics Microwave
Zdroj:	Physics of Plasmas. 16:053502
ISSN:	1089-7674 1070-664X
DOI:	10.1063/1.3126963
Popis:	The properties of plasma in Ar/N2 microwave electron cyclotron resonance discharge with a percentage of N2 flow rate ranging from 5% to 50% have been studied in order to understand the effect of N2 flow rate on the mechanical properties of silicon nitride films. N2+ radicals as well as N2, N+ are found by optical emission spectroscopy analysis. The evolution of plasma density, electron kinetic energy, N2+, N2, and N+ emission lines from mixed Ar/N2 plasma on changing mixture ratio has been studied. The mechanisms of their variations have been discussed. Moreover, an Ar/N2 flow ratio of 2/20 is considered to be the best condition for synthesizing a-Si3N4, which has been confirmed in the as-deposited silicon nitride films with quite good mechanical properties by nanoindentation analyses.
Databáze:	OpenAIRE
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