Zero bias resonant tunnel Schottky contact diode for wide-band direct detection

Autor:	Premjeet Chahal, Francis J. Morris, G. Frazier
Rok vydání:	2005
Předmět:	Physics business.industry Schottky barrier Detector Schottky diode Backward diode Electronic Optical and Magnetic Materials Tunnel diode Optoelectronics Electrical and Electronic Engineering business Noise-equivalent power Step recovery diode Diode
Zdroj:	IEEE Electron Device Letters. 26:894-896
ISSN:	0741-3106
DOI:	10.1109/led.2005.859622
Popis:	A Schottky-collector resonant tunnel diode detector has been fabricated and characterized at zero bias up to 400 GHz. General device structure and fabrication are discussed, and small-signal equivalent models are presented for different diode areas. Over the measured range of 200 to 400 GHz using a monolithic antenna structure, noise equivalent power values between 3-8 pW/Hz/sup 1/2/ are achieved. The current-voltage characteristics of the diode show weak temperature dependence over a measured range of 213-323 K.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::dc9682af650215c3c1cfe9a70eda35ad https://doi.org/10.1109/led.2005.859622 Zobrazit plný text záznamu