Electrical Properties of TiN/TiO2/FTO Resistive Random-Access Memory Based on Peroxo Titanium Complex Sol Solution by Heat Treatment

Autor: Hyeonmin Yim, Jinho Lee, Won Jin Kim, Seung-Hwan Oh, Dong Hyeok Seo, Donghee Lee, Ryun Na Kim, Woo-Byoung Kim
Rok vydání: 2022
Předmět:
Zdroj: Korean Journal of Materials Research. 32:384-390
ISSN: 2287-7258
1225-0562
DOI: 10.3740/mrsk.2022.32.9.384
Databáze: OpenAIRE