Spin relaxation in undoped GaAs quantum wells

Autor:	A. Malinowski, R.S. Britton, T. Grevatt, R.T. Harley
Rok vydání:	2002
Předmět:	Materials science business.industry Exciton Physics::Optics Laser law.invention Gallium arsenide Optical pumping Condensed Matter::Materials Science chemistry.chemical_compound Reflection (mathematics) chemistry law Sapphire Optoelectronics Atomic physics business Quantum well Spin-½
Zdroj:	Technical Digest. Summaries of Papers Presented at the International Quantum Electronics Conference. Conference Edition. 1998 Technical Digest Series, Vol.7 (IEEE Cat. No.98CH36236).
DOI:	10.1109/iqec.1998.680391
Popis:	We describe comprehensive measurements of spin relaxation in undoped MBE GaAs-Al/sub 0.35/Ga/sub 0.65/As quantum wells at room temperature and down to 10 K. Samples from several sources have been investigated and are compared with results from other workers. We used a pump-probe quasi-normal-incidence reflection technique based on a ps mode-locked Ti:sapphire laser. The pump and delayed weak probe beams were tuned to the n=1 heavy-hole exciton feature in each sample and were circularly and linearly polarized, respectively.
Databáze:	OpenAIRE
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