Effect of Ag doping on the structural, electrical and optical properties of ZnO grown by MOCVD at different substrate temperatures
| Autor: | Jens Eriksson, Ioannis Tsiaoussis, A. I. Ievtushenko, V. A. Karpyna, Rositsa Yakimova, Ivan Shtepliuk, Volodymyr Khranovskyy, G. V. Lashkarev |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Kelvin probe force microscope Photoluminescence Materials science Doping 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics Microstructure 01 natural sciences Chemical engineering 0103 physical sciences General Materials Science Electrical measurements Nanorod Work function Electrical and Electronic Engineering 0210 nano-technology |
| Zdroj: | Superlattices and Microstructures. 117:121-131 |
| ISSN: | 0749-6036 |
| Popis: | ZnO films and nanostructures were deposited on Si substrates by MOCVD using single source solid state zinc acetylacetonate (Zn(AA)) precursor. Doping by silver was realized in-situ via adding 1 and 10 wt. % of Ag acetylacetonate (Ag(AA)) to zinc precursor. Influence of Ag on the microstructure, electrical and optical properties of ZnO at temperature range 220–550 °C was studied by scanning, transmission electron and Kelvin probe force microscopy, photoluminescence and four-point probe electrical measurements. Ag doping affects the ZnO microstructure via changing the nucleation mode into heterogeneous and thus transforming the polycrystalline films into a matrix of highly c-axis textured hexagonally faceted nanorods. Increase of the work function value from 4.45 to 4.75 eV was observed with Ag content increase, which is attributed to Ag behaviour as a donor impurity. It was observed, that near-band edge emission of ZnO NS was enhanced with Ag doping as a result of quenching deep-level emission. Upon high doping of ZnO by Ag it tends to promote the formation of basal plane stacking faults defect, as it was observed by HR TEM and PL study in the case of 10 wt.% of Ag. Based on the results obtained, it is suggested that NS deposition at lower temperatures (220–300 °C) is more favorable for p-type doping of ZnO. |
| Databáze: | OpenAIRE |
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