Raman spectroscopic study of femtosecond laser-induced phase transformation associated with ripple formation on single-crystal SiC
| Autor: | Shuichi Hashimoto, Shigeru Ueno, Makoto Yamaguchi, Shigeki Matsuo, Toshiaki Murai, Takuro Tomita, Keita Kinoshita, Ryota Kumai |
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| Rok vydání: | 2010 |
| Předmět: |
Amorphous silicon
Materials science Silicon business.industry Nanocrystalline silicon chemistry.chemical_element General Chemistry Amorphous solid Carbide chemistry.chemical_compound symbols.namesake Optics chemistry Femtosecond Silicon carbide symbols Optoelectronics General Materials Science business Raman spectroscopy |
| Zdroj: | Applied Physics A. 99:23-27 |
| ISSN: | 1432-0630 0947-8396 |
| DOI: | 10.1007/s00339-010-5569-4 |
| Popis: | Raman spectroscopy was performed to investigate microscopic structural changes associated with a ripple structure formation initiated by femtosecond laser irradiation on the surface of single-crystal silicon carbide. The amorphous phases of silicon carbide, silicon, and carbon were observed. The intensity ratio between amorphous silicon carbide and silicon changed discretely at the boundary between fine and coarse ripples. The physical processes responsible for the formation of the ripple structure are discussed. |
| Databáze: | OpenAIRE |
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