Silicon Degradation in Monolithic II–VI/Si Tandem Solar Cells
| Autor: | Niranjana Mohan Kumar, Madhan K. Arulanandam, Kevin Tyler, Jennifer Drayton, Ramesh Pandey, James R. Sites, Richard R. King |
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| Rok vydání: | 2020 |
| Předmět: |
Chemical substance
Materials science Tandem Silicon business.industry 020209 energy chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Cadmium telluride photovoltaics Electronic Optical and Magnetic Materials law.invention chemistry law Solar cell 0202 electrical engineering electronic engineering information engineering Optoelectronics Degradation (geology) Electrical and Electronic Engineering 0210 nano-technology business Science technology and society Deposition (law) |
| Zdroj: | IEEE Journal of Photovoltaics. 10:690-695 |
| ISSN: | 2156-3403 2156-3381 |
| DOI: | 10.1109/jphotov.2019.2961607 |
| Popis: | II–VI/Si tandem solar cells have strong potential for high efficiency at low cost by combining the two most widely used solar cell materials: silicon and cadmium telluride (CdTe). However, there are challenges with this merger, as loss of minority-carrier lifetime in the silicon bottom cell can be caused by growth of a II–VI cell on top. Silicon lifetime degradation in monolithic II–VI/Si structures is measured here on experimental samples for CdTe deposition temperatures between 400 and 500 °C, with variable In2O3:ZnO (IZO) thickness between the CdTe and silicon, and with and without CdCl2 postdeposition treatment. Results indicate that the CdCl2 treatment has the strongest effect on silicon lifetime reduction, followed by temperature and IZO thickness. Potential causes are discussed, and the effect on monolithic II–VI/Si two-junction solar cells is modeled. Remarkably, many silicon samples in the study were able to maintain >400 μs lifetimes, with some exceeding 1 ms, consistent with >30% projected efficiency in fully integrated II–VI/Si tandem solar cells. |
| Databáze: | OpenAIRE |
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