The variation of the P/N junction position in GaAs/GaAlAs double heterostructures grown by low pressure mo vpe
| Autor: | Stephen D. Hersee, M. Baldy, J. P. Duchemin |
|---|---|
| Rok vydání: | 1983 |
| Předmět: |
Materials science
business.industry Contact resistance Doping chemistry.chemical_element Heterojunction Zinc Condensed Matter Physics Electronic Optical and Magnetic Materials Active layer chemistry Phase (matter) Materials Chemistry Optoelectronics Electrical and Electronic Engineering business p–n junction Layer (electronics) |
| Zdroj: | Journal of Electronic Materials. 12:345-357 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/bf02651136 |
| Popis: | A modified contact resistance profiler has been used to determine the dopinq type of the active layer in GaAs/Ga AlAs double heterostructures qrown by low pressure metalorganic vanour phase enitaxy (LP-MO VPE). It was found that under normal growth conditions. The p/n junction is located inside the “p-tyne” Ga0.65Al0.35As confinement layer. SIMS data show that this displacement of the p/n junction is due to electrical compensation of the zinc doping. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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