Enhanced performance of silicon based photodetectors using silicon/germanium nanostructures
| Autor: | Klaus Thonke, Rolf Sauer, Johannes Konle, Hartmut Presting, H. Kibbel |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
Silicon business.industry chemistry.chemical_element Heterojunction Strained silicon Germanium Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Silicon-germanium chemistry.chemical_compound chemistry Materials Chemistry Optoelectronics Quantum efficiency Electrical and Electronic Engineering business Quantum well |
| Zdroj: | Solid-State Electronics. 45:1921-1925 |
| ISSN: | 0038-1101 |
| Popis: | We have studied the influence of nanoscaled lateral silicon/silicon–germanium layers and three-dimensional germanium quantum dots on the performance of silicon based infrared detectors in the wavelength range between 2 and 10 μm and solar cells for space applications. The SiGe heterostructures were grown by molecular-beam epitaxy (MBE) on 〈1 0 0〉 -Si substrates allowing it to tailor the photoresponse and cut-off wavelength for IR-detectors by “band engineering” of the Ge-content and geometry of the active layers. A detectivity in excess of 8×1011 cm Hz0.5/W at 75 K was measured for Si/SiGe quantum well structures. In addition, the growth of Ge islands on Si layers in the Stranski–Krastanow mode was performed to increase absorption and quantum efficiency in Si-solar cells. Atomic force microscopy and photoluminescence measurements of Ge-island structures, grown by MBE under varying conditions, exhibit three-dimensional growth in a small temperature regime between 500°C and 700°C. |
| Databáze: | OpenAIRE |
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