A high-performance AlGaAs/InGaAs/GaAs pseudomorphic MODFET-based monolithic optoelectronic receiver
| Autor: | J.-W. Seo, Ilesanmi Adesida, J.J. Morikuni, A.A. Keterson, M. Tong, K. Nummila, Sung-Mo Kang |
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| Rok vydání: | 1992 |
| Předmět: |
Transimpedance amplifier
Materials science business.industry Transistor Photodetector Semiconductor device Integrated circuit Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Gallium arsenide chemistry.chemical_compound chemistry law Optoelectronics Field-effect transistor Electrical and Electronic Engineering Resistor business |
| Zdroj: | IEEE Photonics Technology Letters. 4:73-76 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/68.124881 |
| Popis: | A monolithically integrated optoelectronic receiver based on the pseudomorphic InGaAs on GaAs material system has been fabricated and tested for the first time. Quarter-micrometer modulation-doped field-effect transistors (MODFETs) with f/sub t/'s of 66 GHz are used in the two-stage transimpedance amplifier design. The circuit utilizes all active components including a metal-semiconductor-metal (MSM) photodetector and a common-gate FET active feedback resistor. > |
| Databáze: | OpenAIRE |
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