Inclusion of nano-Ag plasmonic layer enhancing the performance of p-Si/CdS solar cells
| Autor: | B.R. Chakraborty, G. Sehgal, Radhaballav Bhar, Dibyendu Ghosh, Arun Kumar Pal, B. Ghosh, Sajjad Hussain |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
business.industry Doping Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry law Solar cell Materials Chemistry Optoelectronics Plasmonic solar cell Electrical and Electronic Engineering Absorption (electromagnetic radiation) business Short circuit Layer (electronics) Indium Plasmon |
| Zdroj: | physica status solidi (a). 211:890-900 |
| ISSN: | 1862-6300 |
| DOI: | 10.1002/pssa.201330424 |
| Popis: | Introduction of plasmonic layer in p-Si/undoped CdS/indium doped CdS (p-Si/CdS/In:CdS) solar cell indicated an enhancement of short circuit current which improved the overall increase in efficiency. The location of n-Ag layer and the possible interdiffusion of n-Ag at the interface were examined critically by secondary ion mass spectroscopy. The effect of plasmonic layer in the above cell structure and its overall performance has been critically studied in terms of the morphology, particle size distribution, optical absorption, current-voltage (J-V) characteristics, capacitance-voltage (C-V) characteristics, and lifetime of the photo-generated carriers. |
| Databáze: | OpenAIRE |
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