Strategy for preparation of transparent organic thin film transistors with PEDOT:PSS electrodes and a polymeric gate dielectric
| Autor: | Christopher Keil, Georg Albrecht, Derck Schlettwein, S. Heuser |
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| Rok vydání: | 2015 |
| Předmět: |
Organic field-effect transistor
Materials science business.industry Mechanical Engineering Gate dielectric Dielectric Condensed Matter Physics Polystyrene sulfonate Organic semiconductor chemistry.chemical_compound chemistry PEDOT:PSS Mechanics of Materials Thin-film transistor Polymer chemistry Optoelectronics General Materials Science Field-effect transistor business |
| Zdroj: | Materials Science in Semiconductor Processing. 40:772-776 |
| ISSN: | 1369-8001 |
| DOI: | 10.1016/j.mssp.2015.07.057 |
| Popis: | Fully transparent organic field effect transistors (OFET) in top- and bottom-gate layouts were prepared. Poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) was structured photolithographically as either gate- or source- and drain-contact on top of poly(4-vinylphenol) (PVP). The dielectric material was fitted to the sequence of materials by combining water soluble polyvinyl alcohol (PVA) and PVP. N-type conducting hexadecafluorophthalocyaninato-copper (F16PcCu) was used as organic semiconductor sensitive to interface traps. Critical boundary surfaces for film growth were examined by microscopic methods, which revealed smooth polymer surfaces as a result of our preparation and lithography steps characterizing the presented concept as a viable alternative to existing approaches. |
| Databáze: | OpenAIRE |
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