Enhancement-Mode AlGaN/GaN MIS-HEMTs With High VTH and High IDmax Using Recessed-Structure With Regrown AlGaN Barrier

Autor:	Joel T. Asubar, Masaaki Kuzuhara, Shinsaku Kawabata, Hirokuni Tokuda, Akio Yamamoto
Rok vydání:	2020
Předmět:	010302 applied physics Materials science business.industry Transistor Algan gan 01 natural sciences Electronic Optical and Magnetic Materials law.invention Threshold voltage Planar law 0103 physical sciences Optoelectronics Electrical and Electronic Engineering Drain current business
Zdroj:	IEEE Electron Device Letters. 41:693-696
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2020.2985091
Popis:	We report on an Al2O3 /AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) with recessed-gate structure and regrown AlGaN barrier. After analyzing the possibility of obtaining high threshold voltage ( ${V}_{\text {th}}$ ) within the framework of Tapajna and Kuzmik model from preliminary experiments using MIS-diode structures, we fabricated a MIS-HEMT with the same materials and structures. The transistor exhibited a high ${V}_{\text {th}}$ value of +2.3 V determined at the drain current criterion of 10 $\mu $ A/mm together with a maximum drain current density ( ${I}_{\text {Dmax}}$ ) of 425 mA/mm. We believe that the adoption of a technology, i. e., AlGaN regrowth on dry-etched GaN surface, previously demonstrated by our group in planar device, is the main key for achieving such desirable performance.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::dc103fd53946c76f4f4cd5f58e6ddf20 https://doi.org/10.1109/led.2020.2985091 Zobrazit plný text záznamu