| Autor: |
N. Minamitani, Takeharu Etoh, Yoshinari Kamakura, Le Thi Yen |
| Rok vydání: |
2016 |
| Předmět: |
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| Zdroj: |
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK). |
| DOI: |
10.1109/imfedk.2016.7521668 |
| Popis: |
Electron travel time distribution in the backside illuminated in-situ storage image sensor (BSI ISIS) is analyzed based on the drift diffusion model coupled with the light-absorption model. Dependence of the variation on the various device design parameters and physical conditions is discussed. It is shown that the ultimate highest frame rate is dependent on the light absorption coefficient. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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