High Quality Thermal Donor Doped Czochralski Silicon Ingot for Industrial Heterojunction Solar Cells
| Autor: | Jay, F., Martel, B., Tomassini, M., Peyronnet-Dremière, R., Stadler, J., Veirman, J., Brun, X., Muñoz, D., Roux, C., Jouini, A. |
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| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: | |
| DOI: | 10.4229/eupvsec20152015-2bo.3.3 |
| Popis: | 31st European Photovoltaic Solar Energy Conference and Exhibition; 316-321 Phosphorus doped Czochralski silicon ingots are industrially grown to produce good quality wafers in order to fabricate high efficiency hydrogenated amorphous Si/crystalline Si heterojunction solar cells. However, metallic contamination, interstitial oxygen related defects and phosphorus segregation introduce strong inhomogeneity in terms of material resistivity and quality along the ingot. These defects can represent 15-25% of standard Czochralski ingot height and is harmful to the solar cell efficiency. To circumvent these issues, we investigate the substitution of the phosphorus ingot doping by a new doping technique using oxygen-related thermal donors. In our study, the thermal donors were activated at the ingot scale by different annealing steps. The resistivity scattering along the ingot height was successfully reduced. This new doping technique has also demonstrated the compatibility with the production of high material quality (effective carrier lifetime up to 9ms). Moreover, solar cells with efficiencies above 20% were obtained (comparable to the ones obtained on standard phosphorus doped wafers). Unfortunately, the stability of the efficiency throughout the ingot was not reached mainly due to defects generate during the ingot crystallization. Further improvements are ongoing to solve these remaining issues. |
| Databáze: | OpenAIRE |
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