Device operation of p-i-p type diamond metal–insulator–semiconductor field effect transistors with sub-micrometer channel
| Autor: | Koji Kobashi, Yoshihiro Yokota, Kazushi Hayashi, Nobuyuki Kawakami, Takeshi Tachibana |
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| Rok vydání: | 2005 |
| Předmět: |
business.industry
Chemistry Mechanical Engineering Mineralogy Diamond General Chemistry engineering.material Thermal conduction Epitaxy Electronic Optical and Magnetic Materials Semiconductor Ion implantation Materials Chemistry engineering Optoelectronics Field-effect transistor Electrical and Electronic Engineering Current (fluid) business Current density |
| Zdroj: | Diamond and Related Materials. 14:509-513 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/j.diamond.2004.12.029 |
| Popis: | Sub-micrometer p-i-p type diamond metal–insulator–semiconductor field effect transistors (FETs), which are composed by p+ layers by B ion implantation and intrinsic channels deposited by a selective epitaxy, are fabricated. The current flow in the FET with a sub-micrometer channel are investigated by repeating measurements under a same bias sweep, and the current drift and the degradation of the device characteristics between the repeated measurements are observed. Distribution of the current density in the fabricated FET is analyzed by using a device simulator. The conduction mechanism and the carrier paths in the devices are discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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