Optimizing Collector-Emitter Saturation Voltage at 3000 V Insulated Gate Bipolar Transistors Using Laser Thermal Annealing
| Autor: | Jinyoung Park, Hoon-Kyun Shin, Bong-Hwan Kim, Sang-Mok Chang |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
business.industry Annealing (metallurgy) Bipolar junction transistor Analyser 020206 networking & telecommunications 02 engineering and technology 021001 nanoscience & nanotechnology Laser Electronic Optical and Magnetic Materials Grinding law.invention law 0202 electrical engineering electronic engineering information engineering Optoelectronics Breakdown voltage Wafer Electrical and Electronic Engineering 0210 nano-technology business Common emitter |
| Zdroj: | Transactions on Electrical and Electronic Materials. 20:7-11 |
| ISSN: | 2092-7592 1229-7607 |
| DOI: | 10.1007/s42341-018-00087-2 |
| Popis: | In this work, two thermal annealing processes (furnace and laser annealing) are adopted to obtain 3000 V breakdown voltage in insulated gate bipolar transistors (IGBTs) for propulsion control system of electric vehicles. In furnace annealing process (450 °C for 30 min), the parameter of Vce(sat) is 5.5–6.5 V once measuring at Ic = 2.0 A with EDS(electrical die sorting) analyser. However, annealing process was performed using a laser equipment to lower the Vce(sat). After back side grinding and back side implant, the sample wafer undergoes laser annealing process. From various annealing conditions it was found that the Vce(sat) was 1.6–1.7 V when measuring at collector current (Ic) of 2.0 A after annealing at pulse with of 1100 nm, 3-overlap and 3.5 J/cm2. From these results, it is found that the Vce(sat) is lower as increasing laser energy density and overlapping and the well-distributed Vce(sat) values over the entire chips appear as widening the laser pulse. |
| Databáze: | OpenAIRE |
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