The microstructure of programmedn+pn+polycrystalline silicon antifuses

Autor:	M. E. Lunnon, D. W. Greve
Rok vydání:	1983
Předmět:	Materials science Silicon Dopant business.industry General Physics and Astronomy chemistry.chemical_element Semiconductor device engineering.material Microstructure Polycrystalline silicon chemistry engineering Antifuse Optoelectronics business Ohmic contact High voltage electron microscopy
Zdroj:	Journal of Applied Physics. 54:3278-3281
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.332438
Popis:	The microstructure and programming mechanism of an electrically programmable antifuse is described. The device consists of n+pn+ junctions in polycrystalline silicon programmed by applying voltage pulses to the two n+ terminals. High voltage electron microscopy and optical microscopy reveal the micro‐structure of programmed antifuses. Devices with Al metallization can be programmed with a single long pulse. The final resistance is about 20Ω and a metallic aluminum spike is formed between the two contacts. With Al and TiW (barrier) metallization, programming occurs after a series of short pulses by migration of n+ dopant. This results in an ohmic contact between the two n+ regions with a final resistance of approximately 300Ω.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::dbd0b675e5648107a71c6d2bd15267cc https://doi.org/10.1063/1.332438 Zobrazit plný text záznamu