Electrical properties of MOS and MIS diodes using an electrochemically prepared poly(N-methylpyrrole)
| Autor: | Tetsuyuki Kurata, Torahiko Ando, S. Tsunoda, S. Yanaura, Hiroshi Koezuka |
|---|---|
| Rok vydání: | 1988 |
| Předmět: |
Materials science
Polymers and Plastics business.industry Analytical chemistry Oxide chemistry.chemical_element Schottky diode Dielectric Condensed Matter Physics Acceptor Organic semiconductor chemistry.chemical_compound Semiconductor chemistry Materials Chemistry Physical and Theoretical Chemistry business Indium Diode |
| Zdroj: | Journal of Polymer Science Part B: Polymer Physics. 26:1697-1710 |
| ISSN: | 1099-0488 0887-6266 |
| DOI: | 10.1002/polb.1988.090260810 |
| Popis: | Organic semiconductor devices using electrochemically prepared poly(N-methylpyrrole) (PNP) were characterized by capacitance-voltage (C-V) measurements. A device with aluminum evaporated on the PNP behaved as a MOS (metal-oxide semiconductor) diode in vacuum. Assuming the oxide layer between the metal and the PNP to be pure Al2O3, the MOS parameters were calculated. The values obtained for depletion width W = 166 A and acceptor density NA = 1018 cm−3 in the PNP were reasonable by comparison with the previously reported values obtained by Schottky analysis. An indium/poly(p-phenylene)-1,3,4-oxadiazole (POD)/PNP diode was prepared, and C-V measurements were carried out in air. The diode behaved like an MIS (metal-insulator semiconductor) device, but the characteristics showed large variation with frequency. We have proposed a schematic model for this mechanism on the basis of the results obtained by dielectric measurements of POD and the temperature dependence of the MIS characteristics. |
| Databáze: | OpenAIRE |
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