Characterization of high-quality epitaxial AlN films grown by MOVPE

Autor: Hideto Miyake, Osamu Oda, Tomohiko Shibata, Shigeaki Sumiya, Kazumasa Hiramatsu, Keiichiro Asai, Mitsuhiro Tanaka, Teruyo Nagai
Rok vydání: 2001
Předmět:
Zdroj: MRS Proceedings. 693
ISSN: 1946-4274
0272-9172
DOI: 10.1557/proc-693-i9.3.1
Popis: This paper presents the correlation between overall crystal mosaicities and dislocation behaviors of high-quality AlN epitaxial films grown on a C-plane sapphire substrate using a low-pressure metal organic vapor phase epitaxy (LP-MOVPE) method. Typical full width at half maximum (FWHM) values of x-ray rocking curves (XRC) for (0002) and (10-10) of the AlN are 80arcsec and 1800arcsec, respectively. From transmission electron microscopy (TEM) observations, edge-type dislocations thread the AlN layer, however, almost all screw-type dislocations disappear at an early AlN growth stage. The dislocation density of the AlN films in its surface region is as low as approximately 1x1010 cm-2. The distribution of the dislocations is considered to be caused by a large twisted mosaicity and a very small tilted mosaicity.
Databáze: OpenAIRE
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