Sub-quarter-micron Al etching technology using SiON hard mask in transformer coupled plasma (TCP) etcher

Autor:	J.W. Kim, C.H. Park, Y.S. Seol, Il-Hyun Choi, H.S. Shin
Rok vydání:	2003
Předmět:	Materials science Magnetoresistance business.industry chemistry.chemical_element Nanotechnology Integrated circuit Photoresist law.invention Anti-reflective coating chemistry Resist Aluminium law Etching Optoelectronics business Critical dimension
Zdroj:	Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference.
DOI:	10.1109/imnc.1999.797555
Popis:	Aluminum (Al) has been widely used as an interconnecting material for integrated circuits. As the manufacturing of integrated circuits moves toward sub-quarter-micron design rules, there is a strong need for Al etching process with thin Photo Resist (PR). This leads to even more challenging with more complicated Al etching schemes and smaller width of thicker Al line (
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::dbb59296b9cc22ad79f745220e7c1dc7 https://doi.org/10.1109/imnc.1999.797555 Zobrazit plný text záznamu