ANALYSIS OF BANDWIDTH AND NONLINEAR EFFECTS IN InGaAs-BASED BALLISTIC NANODEVICES FOR APPLICATIONS UP TO THz RANGE
| Autor: | Rashmi, Lukasz Bednarz, Loïk Gence, Benoît Hackens, Vincent Bayot, H. Boutry, Isabelle Huynen |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
Terahertz radiation business.industry Bandwidth (signal processing) Bioengineering Nanotechnology Condensed Matter Physics Space charge Computer Science Applications Nonlinear system Optoelectronics General Materials Science Electrical and Electronic Engineering business Biotechnology |
| Zdroj: | International Journal of Nanoscience. :1033-1038 |
| ISSN: | 1793-5350 0219-581X |
| DOI: | 10.1142/s0219581x05004030 |
| Popis: | Analysis of nonlinear effects in InAlAs/InGaAs -based channels and three-terminal ballistic junctions (TBJs) is performed for applications up to THz range. Results show that InGaAs -based channels designed for ballistic operation exhibit high intrinsic cut-off frequency (fT ~ 10 THz ). Nonlinear effects in TBJs, which result from device geometry and space charge distribution, show good qualitative agreement with published results. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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