GaAs and AlGaAs photodiodes for ionizing radiation detectors
| Autor: | V.M. Andreev, V.P. Khvostikov, M.M. Milanova |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
Physics::Instrumentation and Detectors business.industry Scintillator Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Capacitance Particle detector Electronic Optical and Magnetic Materials Photodiode law.invention Condensed Matter::Materials Science Optics Operating temperature law Materials Chemistry Optoelectronics Quantum efficiency Charge carrier Electrical and Electronic Engineering business Dark current |
| Zdroj: | Solid-State Electronics. 47:1835-1841 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/s0038-1101(03)00158-8 |
| Popis: | In this work we present large area AlGaAs photodiodes for detecting the luminescent light of crystal scintillators in detectors of ionizing radiation, fabricated by low-temperature variant of the liquid-phase epitaxy (LPE) method. They exhibit a low leakage current (lower than 10 −12 A/cm 2 ), a high quantum efficiency for wide spectral range (400–900 nm) and a high operating temperature (up to 120 °C). P-i-n GaAs detectors on the base of high purity LPE GaAs material grown by LPE are suggested as an alternative to those on the base of semi-insulating (SI) GaAs material. The use of high purity GaAs instead SI GaAs material much reduces charge carrier trap concentrations and make it possible for p-i-n photodiode to obtain a high charge collection efficiency at low bias voltages. The calculated electrical characteristics show that low capacitance and low dark current can be realised in these photodiodes. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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