Optical anisotropy and surface morphology of InGaAs lattice-mismatched with GaAs(001)

Autor:	Toshiharu Morimura, Takashi Hanada, Takafumi Yao, Takahiro Mori, Meoung Whan Cho
Rok vydání:	2004
Předmět:	Materials science Optical anisotropy Atomic electron transition Lattice (order) Ripple Analytical chemistry General Physics and Astronomy General Materials Science Electronic band structure Spectroscopy Anisotropy Spectral line
Zdroj:	Current Applied Physics. 4:621-624
ISSN:	1567-1739
DOI:	10.1016/j.cap.2004.01.034
Popis:	We investigated surface morphology and optical anisotropy of strained InGaAs films grown on GaAs(0 0 1) substrate using atomic force microscopy (AFM) and reflectance difference/reflectance anisotropy spectroscopy (RDS/RAS). High temperature (HT)-grown samples were found to have a rippled surface structure, however for films grown using a low temperature (LT) growth technique, the surface morphology was significantly improved, without the ripple structure seen on the HT samples. Furthermore, ex situ RD spectra of LT-grown samples showed notable peaks near the critical energies of band structure originated from bulk electronic transitions.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::db9e854a0ba795596446f18b5c88ce5b https://doi.org/10.1016/j.cap.2004.01.034 Zobrazit plný text záznamu Full Text from ScienceDirect