| Autor: |
Naoto Horiguchi, Naoyoshi Tamura, K. Hashimoto, H. Kokura, Akira Katakami, T. Yamamoto, Y. Shimamune, Toshihiko Mori, K. Goto, T. Sakuma, S. Satoh, Akiyoshi Hatada, Y. Tagawa, Y. Hayami, Takashi Saiki, Toshihiro Sugii, Hiroshi Morioka, Kazuo Kawamura, S. Fukuta, M. Kojima, Satoshi Inagaki, Y. S. Kim, Hiroyuki Ohta |
| Rok vydání: |
2005 |
| Předmět: |
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| Zdroj: |
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.. |
| DOI: |
10.1109/iedm.2004.1419111 |
| Popis: |
Strain enhancing laminated SiN (SELS) is reported for the first time. Although the same thickness and stress SiN film is used, channel strain is enhanced by multi layer deposition. This effect was investigated by our simulations and experiments. To solve wafer bending problem, we developed a new process flow which selectively forms SELS only on the nMOS gate. A high performance 37nm gate nMOSFET and 45nm gate pMOSFET (stage IV) were demonstrated with a drive currents of 1120/spl mu/A//spl mu/m and 690/spl mu/A//spl mu/m at V/sub dd/=1V/I/sub off/=100nA//spl mu/m, respectively. This is the best drive current among the recent reports. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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