Amorphous Carbon as a Diffusion Barrier to Copper

Autor:	James W. Mayer, Richard G. Purser, J. W. Strane
Rok vydání:	1993
Předmět:	chemistry.chemical_compound Materials science Diffusion barrier Amorphous carbon Equivalent series resistance chemistry Annealing (metallurgy) Diffusion Oxide Composite material p–n junction Amorphous solid
Zdroj:	MRS Proceedings. 309
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-309-481
Popis:	Amorphous carbon was evaluated as a diffusion barrier between Cu and Si. Samples were annealed at 500 ºC for 1 hour in vacuum. Barrier properties were characterized for metallurgical failure with RBS and XTEM, and electrical properties were characterized with pn junction diodes and MOS capacitors. RBS and X-TEM showed that a barrier 13.5 nm thick prevented Cu and Si diffusion during the anneal. The diodes remained rectifying after annealing, although the series resistance went up. C-V measurements of the capacitors did not show the hysteresis that is typical of mobile charge in the oxide. The barrier breakdown mechanism is diffusion through the amorphous structure.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::db97ae534382c7afa30bda560cf8d4a1 https://doi.org/10.1557/proc-309-481 Zobrazit plný text záznamu Full text from SpringerLink