| Popis: |
The paper presents a new technology to inspect alternating phase shifting masks. Instead of finding defects based on a size-dependent defect specification, defects are found according to their impact at the wafer CD result. The inspection methodology used is aerial imaging. Phase effects are taking into account inherently. The main advantage of this method is that only defects, which actually affect the wafer result, will be detected and classified. The paper presents first inspection results on alternating phase shifting test masks designed for the 70nm generation. |
