The Interaction of Impurity Oxygen with Radiation Defects in Silicon Crystal

Autor:	Laura Hakobyan, Hrant N. Yeritsyan, Ashot Vardanyan, Eleonora A. Hakhverdyan, Vahan A. Sahakyan, Armenuhi A. Khachatryan, Aram A. Sahakyan, Agasi S. Hovhannisyan, V. Tsakanov, N.E. Grigoryan, Bagrat Grigoryan, Gayane Amatuni, Vachagan V. Harutyunyan
Rok vydání:	2015
Předmět:	Monocrystalline silicon Materials science Silicon chemistry Impurity Vacancy defect Solid oxygen Electron beam processing Physical chemistry chemistry.chemical_element Atmospheric temperature range Atomic physics Oxygen
Zdroj:	Journal of Modern Physics. :2050-2057
ISSN:	2153-120X 2153-1196
DOI:	10.4236/jmp.2015.614211
Popis:	Present paper describes the investigation of vacancy (V) and interstitial (I) annihilation on oxygen atoms by means of infrared (IR) absorption and Hall-effect measurements of the accumulation of vacancy-oxygen complexes (VO) in Si crystals at high energy electron irradiation. Silicon samples, containing along with isolated oxygen atoms, more complicated oxygen quasi-molecules of SiOn (n = 1, 2, 3…) type, were used. At isochronal and isothermal annealing in the temperature range of 300°C - 350°C, apart from the reaction of vacancy capturing by oxygen atoms with formation of A-centers, more complicated reactions with participation of vacancies and oxygen atoms were observed: A-centers, oxygen containing quasi-molecules. A model is suggested to describe the observed processes that are qualitatively different from those taking place in samples containing completely dissociated oxygen.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::db8d990e6b8c67c478406e2af94f3549 https://doi.org/10.4236/jmp.2015.614211 Zobrazit plný text záznamu