An analytical model for turn-on characteristics of short channel polycrystalline-silicon thin-film transistor for circuit simulation
| Autor: | R. S. Gupta, Sonia Chopra |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Materials science
business.industry Transconductance Transistor Field effect Conductance engineering.material Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Threshold voltage Polycrystalline silicon law Thin-film transistor engineering Optoelectronics Electrical and Electronic Engineering business Communication channel |
| Zdroj: | Microelectronic Engineering. 54:263-275 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(00)00412-3 |
| Popis: | Short channel effects are incorporated to investigate the impact of the channel length on the turn-on characteristics of a polycrystalline silicon thin-film transistor (poly-Si TFT). The developed threshold voltage and field effect mobility are the key parameters in analysing the above-threshold characteristics. The expressions for the device transconductance and drain conductance are then developed, from which the channel resistance has also been extracted. The expressions so developed are simple and can be extensively used in modeling the short channel TFT. The predicted results are compared with available experimental data, and excellent matching confirms the validity of the model. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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