Epitaxial growth of mosaic diamond: Mapping of stress and defects in crystal junction with a confocal Raman spectroscopy
| Autor: | Andrey Bolshakov, Andrey A. Khomich, Guoyang Shu, Jiaqi Zhu, Jiecai Han, Liu Kang, Victor Ralchenko, E.E. Ashkinazi, Bing Dai, S. N. Bokova-Sirosh, Jiwen Zhao |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
02 engineering and technology Substrate (electronics) engineering.material Epitaxy 01 natural sciences Inorganic Chemistry Crystal Stress (mechanics) symbols.namesake 0103 physical sciences Materials Chemistry 010302 applied physics business.industry Diamond 021001 nanoscience & nanotechnology Condensed Matter Physics Amorphous solid Stress field Crystallography symbols engineering Optoelectronics 0210 nano-technology Raman spectroscopy business |
| Zdroj: | Journal of Crystal Growth. 463:19-26 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2017.01.045 |
| Popis: | We studied defects and stress distributions in mosaic epitaxial diamond film using a confocal Raman spectroscopy, with a special attention to the junction area between the crystals. The mosaics was grown by microwave plasma CVD on closely arranged (1 0 0)-oriented HPHT type Ib substrates. The width of stress affected and defect enriched region around the junction show a tendency of extending with the film thickness, from ≈40 μm on the film-substrate interface to ≈250 μm in the layer 500 μm above the substrate, as found from the mosaics analysis in cross-section. The stress field around the junction demonstrates a complex pattern, with mixed domains of tensile and compressive stress, with maximum value of σ ≈ 0.6 GPa. A similar non-uniform pattern was observed for defect distribution as well. No sign of amorphous sp 2 carbon in the junction zone was revealed. |
| Databáze: | OpenAIRE |
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