Applying sputtering theory to directional atomic layer etching
| Autor: | Richard A. Gottscho, Vahid Vahedi, Thorsten Lill, Samantha Tan, Keren J. Kanarik, Ivan L. Berry |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Argon Silicon Monte Carlo method Tantalum chemistry.chemical_element 02 engineering and technology Surfaces and Interfaces Plasma 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Molecular physics Surfaces Coatings and Films chemistry Etching (microfabrication) Sputtering 0103 physical sciences Collision cascade 0210 nano-technology |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 36:01B105 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.5003393 |
| Popis: | Plasma assisted atomic layer etching (ALE) has recently been introduced into manufacturing of 10 nm logic devices. This implementation of ALE is called directional ALE because ions transfer momentum to the etching surface during the removal step. Plasma assisted directional ALE can be described as sputtering of a thin modified layer on the surface of the unmodified material. In this paper, the authors introduce a collision cascade based Monte Carlo model based on sputtering theory which has evolved for over 50 years [P. Sigmund, Thin Solid Films 520, 6031 (2012)]. To test the validity of this approach, calculated near threshold argon ion sputtering yields of silicon and chlorinated silicon are compared to published experimental data. The calculated ALE curve for Cl2/Ar ALE of tantalum is in good agreement with the experiment. The model was used to predict the presence of salient sputtering effects such as ion mass and impact angle dependence, as well as redeposition in directional ALE. Finally, the author... |
| Databáze: | OpenAIRE |
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