| Autor: |
Shiv Kumar, Tapasya Jain, O. P. Thakur, Anuradha Dhaul, Rachna Manchanda, R. K. Sharma |
| Rok vydání: |
2014 |
| Předmět: |
|
| Zdroj: |
Physics of Semiconductor Devices ISBN: 9783319030012 |
| Popis: |
Cd/Hg Interdiffusion in CdTe passivation layers on HgCdTe epilayer by heat treatment under different annealing conditions have been studied using Secondary Ion Mass Spectrometry (SIMS). Cdmium and Mercury composition profiles have been generated from SIMS depth profiles. The results are important from the point of view of passivation of HgCdTe surface with CdTe layer of graded composition, in order to achieve flat band conditions at CdTe/HgCdTe interface and simultaneously adjusting metal vacancy concentration in the bulk of the material. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
